发明名称 Magnetic Tunnel Junctions
摘要 A magnetic tunnel junction includes a conductive first magnetic electrode that includes magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and includes magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic reference material of the second electrode includes a non-magnetic region comprising elemental iridium. The magnetic reference material includes a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material.
申请公布号 US2016163967(A1) 申请公布日期 2016.06.09
申请号 US201414563303 申请日期 2014.12.08
申请人 Micron Technology, Inc. 发明人 Chen Wei;Kula Witold;Harms Jonathan D.;Murthy Sunil S.
分类号 H01L43/10;H01L43/02 主分类号 H01L43/10
代理机构 代理人
主权项 1. A magnetic tunnel junction, comprising: a conductive first magnetic electrode comprising magnetic recording material; a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material; a non-magnetic tunnel insulator material between the first and second electrodes; and the magnetic reference material of the second electrode including a non-magnetic region comprising elemental iridium, the magnetic reference material including a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material, elemental Ta being between the elemental cobalt or cobalt-rich alloy and the tunnel insulator material, an alloy comprising Co, Fe, and B being between the elemental Ta and the tunnel insulator material.
地址 Boise ID US