| 主权项 |
1. A memory cell, comprising:
a plurality of magnetic tunnel junction (MTJ) layers, the plurality of MTJ layers including a fixed layer, a free layer and a barrier layer between the fixed layer and the free layer; a first electrode coupled to a first one of the plurality of MTJ layers, the first electrode including a first elongated portion extending laterally away from the plurality of MTJ layers; a first contact via coupled to the first elongated portion of the first electrode, a lateral displacement between the first elongated portion and the plurality of MTJ layers configured to direct a first portion of a magnetic field induced by the MTJ switching current from the first contact via through the plurality of MTJ layers; a second electrode coupled to a second one of the plurality of MTJ layers, the second electrode including a second elongated portion extending laterally away from the plurality of MTJ layers; a second contact via coupled to the second elongated portion of the second electrode, a footprint of the second contact via directly aligning with a footprint of the first contact via in a direction perpendicular to a lateral displacement between the second elongated portion and the plurality of MTJ layers, in which a portion of at least one of the plurality of MTJ layers is disposed directly between the first contact via and the second contact via, and the lateral displacement is configured to direct a second portion of the magnetic field induced by the MTJ switching current through the plurality of MTJ layers and the second contact via, the second portion of the magnetic field adding with the first portion of the magnetic field to enhance the magnetic field through the plurality of MTJ layers. |
