发明名称 SEMICONDUCTOR DEVICE INCLUDING MEMORY CELLS
摘要 A semiconductor device includes memory cells; an operation circuit suitable for performing a read operation on the memory cells; and a check circuit suitable for comparing the number of memory cells of which threshold voltages are divided by the read operation, wherein the operation circuit changes a read voltage to be applied to the memory cells in the read operation, based on a result of the comparison.
申请公布号 US2016260493(A1) 申请公布日期 2016.09.08
申请号 US201514818783 申请日期 2015.08.05
申请人 SK hynix Inc. 发明人 KIM Woo Hyun
分类号 G11C16/28 主分类号 G11C16/28
代理机构 代理人
主权项 1. A semiconductor device, comprising: memory cells; an operation circuit suitable for performing a first read operation using a first read voltage on the memory cells included in a cell distribution, the first read operation dividing the cell distribution into a first cell distribution and a second cell distribution based on the first read voltage; and a check circuit suitable for comparing the number of memory cells included in the first cell distribution and the number of memory cells included in the second cell distribution, wherein the operation circuit selects a second read voltage based on a result of the comparison, and performs a second read operation using the second read voltage on the memory cells, and wherein, when the result of the comparison indicates the number of memory cells included in the first cell distribution being greater than the number of memory cells included in the second cell distribution, the second read operation divides the second cell distribution into two cell distributions based on the second read voltage.
地址 Gyeonggi-do KR