| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high threshold level.SOLUTION: A semiconductor device includes a p-type SiC layer 16 having a first plane, a gate electrode 30, and a gate insulating layer 28 provided between the first plane of the SiC layer 16 and the gate electrode 30. The gate insulating layer 28 includes: a first layer 28a; a second layer 28b which has a higher oxygen density than the first layer; and a first region 40 which contains a first element that is at least one element in the group of N (nitrogen), P (phosphorus), As (arsenic), Sb (antimony), and Bi (bismuth) and which is provided between the first layer and the second layer.SELECTED DRAWING: Figure 3 |
