SINGLE ELOG GROWTH TRANSVERSE P-N JUNCTION NITRIDE SEMICONDUCTOR LASER

摘要

A method for fabricating a single ELOG growth transverse p-n junction nitride semiconductor laser and a structure of a semiconductor laser are provided to create vertical quantum wells by deposing a vertical a-face of laterally growing edges. A dielectric layer is deposited and patterned over a substrate. An ELOG(Epitaxial Lateral Overgrowth) region is grown on the substrate in a single growth step. The ELOG region includes an InGaN/InGaN multiple quantum well region(160) positioned between an n-type region and a p-type region. A first portion of the InGaN/InGaN multiple quantum well region is oriented substantially nonparallel to said substrate. A GaN layer is grown on the substrate.