FinFET Device and Method of Manufacturing Same

摘要

A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a fin structure disposed over the substrate. The fin structure includes one or more fins. The semiconductor device further includes an insulation material disposed on the substrate. The semiconductor device further includes a gate structure disposed on a portion of the fin structure and on a portion of the insulation material. The gate structure traverses each fin of the fin structure. The semiconductor device further includes a source and drain feature formed from a material having a continuous and uninterrupted surface area. The source and drain feature includes a surface in a plane that is in direct contact with a surface in a parallel plane of the insulation material, each of the one or more fins of the fin structure, and the gate structure.

主权项

1. A semiconductor device comprising:
a fin structure including a plurality of fins disposed over a substrate, the plurality of fins being aligned in a first direction; an insulation material disposed on the substrate between the plurality of fins, the insulation material not extending beyond the fin structure in a second direction orthogonal to the first direction; a gate structure traversing the plurality of fins and the insulation material disposed between the plurality of fins, wherein the plurality of fins, the insulation material, and the gate structure include coplanar sidewalls in a first plane; and a source and drain feature including a sidewall in a second plane opposing and in contact with the coplanar sidewalls of the plurality of fins, the insulation material, and the gate structure in the first plane.