| 摘要 |
<p>Short channel thin film transistors suffer from unacceptably high leakage currents. The invention provides an electronic device including a thin film transistor in which the length (20) of the channel of the transistor is 1µm or less, and the mobility of the semiconductor material in the channel is less than 0.2 cm2/Vs. The selection of a low mobility semiconductor material results in acceptable off-current characteristics and its effect on the switching speed of the device is compensated for by the short channel length (20) of the device.</p> |
