METHOD FOR MANUFACTURING STRAIN SI-SOI SUBSTRATE AND STRAIN SI-SOI SUBSTRATE MANUFACTURED THEREBY

摘要

PROBLEM TO BE SOLVED: To provide a simple and convenient method for manufacturing a strain Si-SOI substrate wherein the surface of a strain Si layer is flat and has no defect, and only the strain Si layer is formed on an insulating layer. SOLUTION: An SiGe mixed crystal layer 14 is formed on the Si layer 13 of an SOI substrate 10, and a protection layer 16 is formed on the SiGe mixed crystal layer. A hydrogen ion or a helium ion is implanted in a boundary or in the vicinity of the boundary between an insulating layer and the Si layer, and then the substrate is heated at 950°C or higher in an oxidizing atmosphere or an inert gas atmosphere to melt the SiGe mixed crystal layer 14 and diffuse Ge in a part of the Si layer 13. The substrate is cooled to solidify the melted SiGe mixed crystal layer 19, and an SiGe mixed crystal layer 20 that is formed after the solidified SiGe mixed crystal layer 19a and Ge are diffused in a part of the Si layer is removed together with the protection layer 16, resulting in a strain Si-SOI substrate 21 wherein a strain Si layer 13a on the insulating layer 12 is exposed. COPYRIGHT: (C)2005,JPO&NCIPI