发明名称 |
Method for forming a non-volatile memory and a peripheral device on a semiconductor substrate |
摘要 |
A method for forming a semiconductor device includes forming a first gate electrode over a semiconductor substrate, wherein the first gate electrode comprises silicon and forming a second gate electrode over the semiconductor substrate and adjacent the first gate electrode, wherein the second gate electrode comprises silicon. Nanoclusters are present in the first gate electrode. A peripheral transistor area is formed devoid of nanoclusters.
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申请公布号 |
US2007218631(A1) |
申请公布日期 |
2007.09.20 |
申请号 |
US20060376411 |
申请日期 |
2006.03.15 |
申请人 |
PRINZ ERWIN J;CHANG KO-MIN;STEIMLE ROBERT F |
发明人 |
PRINZ ERWIN J.;CHANG KO-MIN;STEIMLE ROBERT F. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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