SEMICONDUCTOR DEVICE HAVING ASYMMETRIC BIT LINES AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device and its manufacturing method are provided to secure an align margin between storage node electrodes and storage node contact plugs by using asymmetrical bit lines. A semiconductor device comprises a substrate, a plurality of transistors, and asymmetrical bit lines. The substrate(100) includes a plurality of active regions isolated from each other. The plurality of transistors are formed on the active regions of the substrate. The transistors are composed of first doped regions at center portions of the active regions, second doped regions at both ends of the active regions, gate insulating patterns between the first and the second doped regions, and word lines on the gate insulating patterns. The word lines are used as gate electrodes. The asymmetrical bit lines(142) are electrically connected with the first doped regions of the transistors. The asymmetrical bit line includes a first side and a second side. A plurality of protrusions are formed on the second side.