| 摘要 |
<p>Spin-transfer torque memory (30) having a specular insulative spacer (TB) is disclosed. The spin-transfer torque memory unit includes a free magnetic layer (FL), a reference magnetic layer (RL), an electrically insulating and non-magnetic tunneling barrier layer (TB) separating the free magnetic layer (FL) from the reference magnetic layer (RL), an electrode layer (E1), and an electrically insulating and electronically reflective layer (ER) separating the electrode layer and the free magnetic layer (FL).</p> |
