发明名称 Lithographic apparatus and method for measuring a pattern property
摘要 <p>A detection method for detecting a property of an extended pattern formed by at least one line generally extending in a first direction. The extended pattern is formed on a substrate or on a substrate table and preferably extends over a length of at least 50x the width of the line. The extended pattern is focus sensitive. The detection method includes moving the substrate table in a first direction and measuring along that first direction a property of the extended pattern. The property can be a result of a physical property of the extended pattern in a second direction perpendicular to the first direction. In a next step a calibration of the substrate table position can be derived from the measured position of the extended pattern.</p>
申请公布号 EP2131244(A2) 申请公布日期 2009.12.09
申请号 EP20090161547 申请日期 2009.05.29
申请人 ASML NETHERLANDS BV 发明人 SLOTBOOM, DAAN;AARTS, IGOR;GEERKE, JOHAN
分类号 G03F7/20;G03F9/00 主分类号 G03F7/20
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