发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer. |
申请公布号 |
US2016204269(A1) |
申请公布日期 |
2016.07.14 |
申请号 |
US201615074245 |
申请日期 |
2016.03.18 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
SAKATA Junichiro;HIROHASHI Takuya;KISHIDA Hideyuki |
分类号 |
H01L29/786;H01L29/423;H01L29/49;H01L29/417 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |