METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To inhibit generation of oxygen vacancies in an oxide semiconductor film in a semiconductor device including an oxide semiconductor; and to improve electrical characteristics in a semiconductor device including an oxide semiconductor.SOLUTION: A method for manufacturing a semiconductor device including an oxide semiconductor includes the steps of forming an oxide semiconductor film, a gate insulating film provided over the oxide semiconductor film, a gate electrode in contact with the gate insulating film, a sidewall insulating film in contact with the gate electrode, and a source electrode and a drain electrode in contact with the oxide semiconductor film. In the method, the gate insulating film and the sidewall insulating film are formed at a temperature at which oxygen contained in the oxide semiconductor film is inhibited from being eliminated, preferably at a temperature lower than a temperature at which oxygen contained in the oxide semiconductor film is eliminated.