Combination Metal Oxide Semi-Conductor Field Effect Transistor (MOSFET) and Junction Field Effect Transistor (JFET) Operable for Modulating Current Voltage Response or Mitigating Electromagnetic or Radiation Interference Effects by Altering Current Flow through the MOSFETs Semi-Conductive Channel Region (SCR)

摘要

Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using a combination of a metal-oxide semiconductor field effect transistor (MOSFET) and junction field effect transistor (JFET) disposed perpendicularly and within a certain orientation to each other. An embodiment of the invention can be formed and operable for modulating current and/or voltage response or mitigating electromagnetic or radiation interference effects on the MOSFET by controlling a semi-conductive channel region (SCR) using an additional gate, e.g., JFET, disposed perpendicularly with respect to the MOSFET configured to generate an electromagnetic field into the MOSFET's semi-SCR. A control system for controlling operation is also provided to include automated systems including sensors as well as manually operated systems. Automated systems can include radiation sensors as well as other control systems such as radio frequency transmitter or receiver systems. Methods of operation for a variety of modes are also provided.

主权项

1. An electrical system comprising:
a metal oxide semi-conductor (MOS) field effect transistor (MOSFET) section disposed in a first substrate section, said MOSFET section comprising a MOSFET control gate, a source region, a drain region, and a semi-conductive channel region within a gate insulator region, said semi-conductive channel region formed between said source region and said drain region, said MOSFET control gate is disposed in proximity with and partially overlapping one side of said source region and one side of said drain region, said MOSFET gate is further disposed on a first side of said semi-conductive channel region; and a monolithic junction field effect transistor (JFET) section disposed on a second side of said gate insulator region that faces away from said MOSFET control gate, said JFET section comprises an opposite dopant of said semi-conductive channel region, said JFET section is further formed comprising a doped region that is not in physical contact with either said source or said drain region and is positioned at a first distance from said MOSFET control gate, said first distance is determined based on a required distance that an electromagnetic field generated by said JFET must travel to pass through said semi-conductive channel region; wherein said JFET section is disposed perpendicularly to said MOSFET on one side of said MOSFET.