发明名称 |
Use of CL2 and/or HCL during silicon epitaxial film formation |
摘要 |
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
|
申请公布号 |
US8586456(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US201113149865 |
申请日期 |
2011.05.31 |
申请人 |
YE ZHIYUAN;KIM YIHWAN;LI XIAOWEI;ZOJAJI ALI;DALIDA NICHOLAS C.;TANG JINSONG;CHEN XIAO;SAMOILOV ARKADII V.;APPLIED MATERIALS, INC. |
发明人 |
YE ZHIYUAN;KIM YIHWAN;LI XIAOWEI;ZOJAJI ALI;DALIDA NICHOLAS C.;TANG JINSONG;CHEN XIAO;SAMOILOV ARKADII V. |
分类号 |
C23C16/24;H01L21/20;H01L21/36 |
主分类号 |
C23C16/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|