| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain an aqueous dispersion for polishing chemical machinery capable of polishing a film to be processed, or the like, of a semiconductor device at a sufficient rate and useful especially in a step of shallow trench isolation. SOLUTION: This aqueous dispersion for polishing the chemical machinery comprises inorganic abrasive grains such as silica or ceria and organic particles composed of polymethyl methacrylate, polystyrene, or the like, having anionic groups such as carboxyl group, hydroxyl group, sulfuric ester group or sulfonic acid group and has a polishing rate of a silicon oxide film of >=5 times, especially >=10 times that of a silicon nitride film. Potassium dodecylbenzenesulfonate, potassium polyacrylate, potassium polyisoprenesulfonate, or the like, can be contained in the aqueous dispersion. The dispersibility, polishing rate and selectivity can be more improved by adjusting the pH with an organic base such as ethylenediamine or ethanolamine or an inorganic base such as ammonia or potassium hydroxide.</p> |
