发明名称 |
SEMICONDUCTOR COMPONENT WITH SCHOTTKY JUNCTION FOR MICROWAVE AMPLIFICATION AND FAST LOGIC CIRCUITS |
摘要 |
A semiconducting component with a Schottky junction with stacked electrodes has a lower electrode forming an emitter or source, a central electrode forming a base or grid and an upper electrode forming either a collector or a drain. Semiconductor material is between the upper electrode and the lower electrode. The central control electrode is in the form of several adjacent conducting fingers. An insulating material is in the region directly below the fingers between the control electrode and the lower electrode, thereby reducing parasitic capacitance between the control electrode and the lower electrode.
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申请公布号 |
US5175597(A) |
申请公布日期 |
1992.12.29 |
申请号 |
US19910714588 |
申请日期 |
1991.06.13 |
申请人 |
THOMSON-CSF |
发明人 |
CACHIER, GERARD;GREMILLET, JACQUES |
分类号 |
H01L21/302;H01L21/3065;H01L21/338;H01L21/76;H01L29/772;H01L29/80;H01L29/812 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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