发明名称 SEMICONDUCTOR COMPONENT WITH SCHOTTKY JUNCTION FOR MICROWAVE AMPLIFICATION AND FAST LOGIC CIRCUITS
摘要 A semiconducting component with a Schottky junction with stacked electrodes has a lower electrode forming an emitter or source, a central electrode forming a base or grid and an upper electrode forming either a collector or a drain. Semiconductor material is between the upper electrode and the lower electrode. The central control electrode is in the form of several adjacent conducting fingers. An insulating material is in the region directly below the fingers between the control electrode and the lower electrode, thereby reducing parasitic capacitance between the control electrode and the lower electrode.
申请公布号 US5175597(A) 申请公布日期 1992.12.29
申请号 US19910714588 申请日期 1991.06.13
申请人 THOMSON-CSF 发明人 CACHIER, GERARD;GREMILLET, JACQUES
分类号 H01L21/302;H01L21/3065;H01L21/338;H01L21/76;H01L29/772;H01L29/80;H01L29/812 主分类号 H01L21/302
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