| 摘要 |
PROBLEM TO BE SOLVED: To perform isolation of a semiconductor layer formed on an insulator stably while suppressing increase in number of process steps and to suppress current leak due to a parasitic transistor. SOLUTION: A cavity 10 is formed between a semiconductor substrate 1 and a second semiconductor layer 6 by touching etching gas or etching liquid to a first semiconductor layer 5 through an exposed surface 9. End of the second semiconductor layer 6 exposed from a support layer 8 is rounded by etching the end of the second semiconductor layer 6 through an exposed surface 9. Subsequently, thermal oxidation of the semiconductor substrate 1 and the second semiconductor layer 6 is performed thus forming a buried insulation layer 11 in the cavity 10 between the semiconductor substrate 1 and the second semiconductor layer 6. A gate electrode 14 arranged to reach the rounded end of the second semiconductor layer 6 is formed on the second semiconductor layer 6. COPYRIGHT: (C)2007,JPO&INPIT
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