| 摘要 |
A method and apparatus for etching photomasks is provided herein. In one embodiment, a method of etching a photomask includes providing a process chamber (102) having a substrate support pedestal (124) adapted to receive a photomask substrate thereon. An ion-radical shield (170) is disposed above the pedestal (124). A substrate (122) is placed upon the pedestal beneath the ion-radical shield (170). A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched predominantly with radicals that pass through the shield. |
