| 摘要 |
PROBLEM TO BE SOLVED: To reduce the operating current and power consumption of a semiconductor laser device in which a plurality of light-emitting units are integrated on the same substrate. SOLUTION: The laser device has, on a substrate, a double hetero-structure composed of a lower clad layer, an active layer on the lower clad layer, and upper clad layers (14 and 24) formed on the active layer and comprising horizontally lateral light sealing mesa-shaped ridges (14a and 24a); and a plurality of light-emitting units (A and B) are formed having the same-length resonators. The active layer comprises window areas (41a, 41b, 42a and 42b) wherein an impurity is diffused, in the vicinity of at least one of a front end face C from which light is emitted, of each of the resonators and a rear end face D at an opposite side. The plurality of light-emitting units include a first light-emitting unit A, and a second light-emitting unit B which emits light with a wavelength longer than the first light-emitting unit. When a dimension of the window areas from the rear end face D to the front end face C is defined as a length of the window areas, the window area of the second light-emitting unit B is longer than the window area of the first light-emitting unit A. COPYRIGHT: (C)2008,JPO&INPIT
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