Oxidation apparatus and method for semiconductor process

摘要

An oxidation apparatus for a semiconductor process includes a gas supply system configured to supply an oxidizing gas and a deoxidizing gas to the process field of a process container through a gas supply port disposed adjacent to target substrates on one side of the process field. The gas supply port includes a plurality of gas spouting holes arrayed over a length corresponding to the process field in a vertical direction. A heater is disposed around the process container and configured to heat the process field. A control section is preset to perform control such that the oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field, and an oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.