MAGNETORESISTANCE EFFECT ELEMENT, MAGETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, AND THEIR MANUFACTURING METHOD

摘要

A magnetoresistance effect element comprising a ferromagnetic tunnel coupling with a tunnel barrier layer sandwiched by at least a pair of ferromagnetic layers wherein a magnetization free layer constituted of one of the ferromagnetic layers is made of a single layer of a material having an amorphous or crystallite structure, or a material layer the main part of which has an amorphous or crystallite structure. This magnetoresistance effect element provides excellent magnetic-resistance characteristics. A magnetic memory element and a magnetic memory device comprising it as the memory element improve both characteristics of write and read.