| 摘要 |
<p>A method for fabricating a transistor of a flash device is provided to avoid generation of a step during an etch process performed after a second conductive layer is formed, by forming a contact hole in a dielectric layer of a transistor and by irradiating ultraviolet rays to neutralize the negative polarity of a residual dielectric layer. A first conductive layer(104) and a dielectric layer(106) are formed on a semiconductor substrate(100). A contact hole is formed in the dielectric layer to expose a part of the first conductive layer. Ultraviolet ray is irradiated to the semiconductor substrate. A second conductive layer(108) is formed on the dielectric layer and the first conductive layer. An etch process is performed to planarize the upper part of the second conductive layer. A capping layer pattern can be formed on the dielectric layer. The dielectric layer can be etched to form a contact hole by using the capping layer pattern as a mask.</p> |
