发明名称 |
NON-CONDUCTIVE THIN FILM DEPOSITION METHOD BY PULSED MAGNETRON SPUTTERING, THIN FILM USING THE SAME AND ELECTRONIC UNIT WITH IT |
摘要 |
A non-conductive thin film deposition method using magnetron sputtering, a thin film deposited using the same and an electronic appliance having the same are provided to prevent electrical shock of an electronic appliance due to leakage of driving current or introduction of external current. A non-conductive thin film deposition method using magnetron sputtering comprises a step of preparing vacuum deposition equipment(1) having solid tin targets(21,23), magnetron sources(71,73) and a substrate(S). Argon gas of 5mTorr to 7mTorr is supplied to the vacuum deposition equipment and current of 0.3A or less is applied to the solid tin targets so that sputtering is performed to deposit a tin thin film on the substrate. The tin thin film is deposited for 10seconds or less.
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申请公布号 |
KR20080081613(A) |
申请公布日期 |
2008.09.10 |
申请号 |
KR20070021892 |
申请日期 |
2007.03.06 |
申请人 |
CHEORWON PLASMA RESEARCH INSTITUTE |
发明人 |
LEE, HO YOUNG;KIM, KAB SEOG;BAE, EUN HYUN;HAN, JEON GEON |
分类号 |
C23C14/35;C23C14/34 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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