METHOD AND APPARATUS FOR HEAT-TREATING HIGH DIELECTRIC CONSTANT FILM

摘要

A substrate in which a high-dielectric-constant gate insulator is formed on a silicon substrate with an interface layer film sandwiched in between is housed in a chamber. A mixed gas of ammonia and nitrogen gas is supplied to the chamber to form an ammonia atmosphere, and flash light is applied in the ammonia atmosphere from flash lamps to the surface of the substrate for an emission time of 0.2 milliseconds to one second. This allows the high-dielectric-constant gate insulator to be heated in the ammonia atmosphere and accelerates nitriding of the high-dielectric-constant gate insulator. Since the time for which flash light is applied is an extremely short time, nitrogen will not reach and nitride the interface layer film, which is formed as a base of the high-dielectric-constant gate insulator.

主权项

1. A heat treatment method for heating a substrate in which a high dielectric constant film is deposited on a base material with an interface layer film sandwiched in between, the method comprising the steps of:
(a) housing said substrate in a chamber; (b) supplying ammonia to said chamber to form an ammonia atmosphere; and (c) applying flash light to a surface of said substrate housed in said chamber to heat said high dielectric constant film.