| 摘要 |
<p>Devices and method of manufacture of these devices are described whereby the devices have shallow junction depths far removed from end-of range defects. The method includes forming an amorphous region in a crystalline semiconductor such as silicon down to a first depth followed by implantation of a substitutional element such as carbon to a smaller depth than the first depth. The region is then doped with suitable dopants, e.g. phosphorus or boron and the amorphous layer recrystallized by a thermal processing step.</p> |
