| 发明名称 |
SILICON-BASED REPAIR METHODS AND COMPOSITION |
| 摘要 |
There is set forth herein a silicon-based patch formulation comprising about 25 to 66 percent by volume of a solvent; about 4 to 10 percent by volume of a silicon-comprising binding material; and about 30 to 65 percent by volume of a patching material, the patching material comprising particles having one or more non-actinide Group IIIA elements, wherein a molar ratio of the one or more non-actinide Group IIIA elements to silicon within the patch formulation is about 0.95 to 1.25. |
| 申请公布号 |
US2016194476(A1) |
申请公布日期 |
2016.07.07 |
| 申请号 |
US201514589021 |
申请日期 |
2015.01.05 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
LIPKIN Don Mark;ANTOLINO Nicholas Edward;POERSCHKE David;MCEVOY Kevin Paul |
| 分类号 |
C08K3/34;C08K3/36 |
主分类号 |
C08K3/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A silicon-based patch formulation comprising:
about 25 to 66 percent by volume of a solvent; about 4 to 10 percent by volume of a silicon-comprising binding material; and about 30 to 65 percent by volume of a patching material, the patching material comprising particles having one or more non-actinide Group IIIA elements, wherein a molar ratio of the one or more non-actinide Group IIIA elements to silicon within the silicon-based patch formulation is about 0.95 to 1.25. |
| 地址 |
Schenectady NY US |
