| 摘要 |
To enhance the reliability of the semiconductor device using a nitride semiconductor. A channel layer is formed over a substrate, a barrier layer is formed over the channel layer, a cap layer is formed over the barrier layer, and a gate electrode is formed over the cap layer. In addition, a nitride semiconductor layer is formed in a region where the cap layer over the barrier layer is not formed, and a source electrode and a drain electrode are formed over the nitride semiconductor layer. The cap layer is a p-type semiconductor layer, and the nitride semiconductor layer includes the same type of material as the cap layer and is in an intrinsic state or an n-type state. |
