SEMICONDUCTOR DEVICE INCLUDING CELL REGION STACKED ON PERIPHERAL REGION AND METHOD OF FABRICATING THE SAME

摘要

Provided are semiconductor devices including a peripheral region and a cell region stacked thereon and a method of fabricating the same. The semiconductor device may include a peripheral region including a lower substrate and a peripheral circuit provided thereon and a cell region including an upper substrate and a cell array provided thereon. The cell region may be stacked on the peripheral region. When an operation signal is applied to the cell region from the peripheral region, at least a portion of the peripheral and cell regions may be used as a ground pattern applied with a ground signal, thereby being in an electrical ground state.

主权项

1. A semiconductor device, comprising:
a cell-on-peripheral structure including a peripheral region and a cell region stacked thereon, wherein the peripheral region comprises a lower substrate, a peripheral circuit provided on the lower substrate, and a peripheral metal line electrically connected to the peripheral circuit, wherein the cell region comprises an upper substrate and a cell region overlapping the peripheral circuit, wherein the upper substrate includes a base substrate encompassing junction regions electrically connected to circuits in the cell region; and a grounding structure disposed between the base substrate and the peripheral metal line, the grounding structure providing an electrical ground during a memory cell erase operation.