IMPROVED STRUCTURE FOR A SEMICONDUCTOR DEVICE

摘要

An exemplary embodiment of the invention is a semiconductor device (200) comprising a substrate (202) of a first conductivity type and a subcollector (204) of a second conductivity type provided on the substrate. An intrinsic epitaxial layer (206) is formed on the substrate. A collector region (208) of the second conductivity type is adjacent the subcollector (204) and a base region (212) of the first conductivity type is adjacent the collector region (208). An emitter region (216) of the second conductivity type is adjacent the base region (212) both have a size not substantially greater than the emitter size. An alternate embodiment (300) includes a spacer layer (302) formed between the emitter region and the base region.