发明名称 |
Shallow trench isolation using non-conformal dielectric material and planarizatrion |
摘要 |
A method is provided for planarizing a structure such as a shallow trench isolation region on a semiconductor substrate. A semiconductor substrate is provided having raised and lowered regions with substantially vertical and horizontal surfaces. The lowered regions may correspond to trench regions. The upper regions are covered by a masking layer of nitride having a predetermined thickness. Filler material such as non-conformal high density plasma oxide may be deposited over the horizontal surfaces to a thickness terminating within that of the thickness of the nitride layer. The raised regions of the filler material are then selectively removed in a single planarizing step without removing the filler material in the lowered regions using a fixed abrasive hard polishing pad, as opposed to an abrasive slurry.
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申请公布号 |
US2002094649(A1) |
申请公布日期 |
2002.07.18 |
申请号 |
US20010764674 |
申请日期 |
2001.01.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ARTHANARI SENTHILKUMAR;MEI SHAW-NING;VISHNESKY EDWARD J. |
分类号 |
H01L21/762;(IPC1-7):H01L21/336;H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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主权项 |
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