| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to suppress the movement of electrons around a surface of a semiconductor layer by implementing a reverse conductive dopant layer on the semiconductor layer between a gate electrode and a drain layer. A semiconductor device includes a gate insulating layer(6), a gate electrode(7), a source layer(8), a drain layer(12), and a first conductive dopant layer(13). The gate insulating layer is formed on a semiconductor layer with a first conductive type. The gate electrode is formed on the gate insulating layer. The source layer with a second conductive type is formed on the semiconductor layer. The drain layer having the second conductive type is formed apart from a drain side end of the gate electrode and formed on the semiconductor layer. The first conductive dopant layer adjacent to the drain layer is formed between the gate electrode and the drain layer.
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