SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technology for improving the reverse recovery characteristics of a semiconductor device while suppressing occurrence of breakdown during reverse bias. SOLUTION: The semiconductor device has a cathode region 22 (first semiconductor region) containing n-type impurities in high concentration, an intermediate semiconductor region 26 (second semiconductor region) formed on the cathode region 22 and containing n-type impurities in low concentration or not containing n-type impurities, a p--type semiconductor region 32 (third semiconductor region) formed on the intermediate semiconductor region 26 and containing p-type impurities in low concentration, a plurality of anode regions 34 (fourth semiconductor region) containing p-type impurities in high concentration and distributed while opposing the surface of the p--type semiconductor region 32, and a barrier layer (fifth semiconductor region) containing n-type impurities in concentration above the impurity concentration of the intermediate semiconductor region 26 and formed at least along the footprint of the anode region 34 not to extend to the surface of the p--type semiconductor region 32. COPYRIGHT: (C)2008,JPO&INPIT