发明名称 |
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, POWER CONVERSION APPARATUS, THREE-PHASE MOTOR SYSTEM, AUTOMOBILE, AND RAIL VEHICLE |
摘要 |
In a semiconductor device having a silicon carbide device, a technique capable of suppressing variation in a breakdown voltage and achieving reduction in an area of a termination structure is provided. In order to solve the above-described problem, in the present invention, in a semiconductor device having a silicon carbide device, a p-type first region and a p-type second region provided to be closer to an outer peripheral side than the first region are provided in a junction termination portion, a first concentration gradient is provided in the first region, and a second concentration gradient larger than the first concentration gradient is provided in the second region. |
申请公布号 |
EP3046149(A1) |
申请公布日期 |
2016.07.20 |
申请号 |
EP20130892962 |
申请日期 |
2013.09.09 |
申请人 |
HITACHI, LTD. |
发明人 |
MOCHIZUKI, KAZUHIRO;KAMESHIRO, NORIFUMI |
分类号 |
H01L29/861;H01L21/329;H01L29/06;H01L29/16;H01L29/872 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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