发明名称 HOMOGENEOUS PRECURSOR FORMATION METHOD AND DEVICE THEREOF
摘要 A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system.
申请公布号 US2016333200(A1) 申请公布日期 2016.11.17
申请号 US201615219450 申请日期 2016.07.26
申请人 PURDUE RESEARCH FOUNDATION 发明人 Agrawal Rakesh;Zhang Ruihong;Walker Bryce Chryst;Handwerker Carol
分类号 C09D7/12;H01L31/18;H01L31/072;C01B19/00;H01L31/032 主分类号 C09D7/12
代理机构 代理人
主权项 1. A method of dissolving copper (I) sulfide (Cu2S), copper (II) sulfide (CuS), copper (I) selenide (Cu2Se), and/or copper (II) selenide (CuSe), comprising Cu2S, CuS, Cu2Se and/or CuSe with a mixture of amine and dithiol.
地址 West Lafayette IN US
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