发明名称 |
NOVEL TRISILYL AMINE DERIVATIVE, METHOD FOR PREPARING THE SAME AND SILICON-CONTAINING THIN FILM USING THE SAME |
摘要 |
Provided are a novel trisilyl amine derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods. |
申请公布号 |
US2016333030(A1) |
申请公布日期 |
2016.11.17 |
申请号 |
US201515110692 |
申请日期 |
2015.01.08 |
申请人 |
DNF CO.,LTD. |
发明人 |
Jang Se Jin;Lee Sang-Do;Kim Jong Hyun;Kim Sung Gi;Kim Do Yeon;Yang Byeong-il;Seok Jang Hyeon;Lee Sang Ick;Kim Myong Woon |
分类号 |
C07F7/10 |
主分类号 |
C07F7/10 |
代理机构 |
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代理人 |
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主权项 |
1. A trisilyl amine derivative represented by the following Chemical Formula 1: in Chemical Formula 1, R1 and R2 are each independently hydrogen, halogen, or (C1-C3)alkyl. |
地址 |
Daejion KR |