发明名称 GATE DRIVING CIRCUIT AND DISPLAY DEVICE COMPRISING THE SAME
摘要 A gate driving circuit is provided. A gate driving circuit comprises a pull-up control unit including a control transistor, a pull-up unit, a carry unit which outputs a clock signal into a kth carry signal and a pull-down unit which pulls down a control node to an off voltage, wherein the control transistor includes one electrode and the other electrode connected to the control node, the one electrode and the other electrode being disposed on a gate electrode such that the one electrode and the other electrode being insulated from the gate electrode, wherein the gate electrode and the other electrode are disposed not to be overlapped with each other, and a distance between an upper surface of the gate electrode and a lower surface of the one electrode is longer than that of the upper surface of the gate electrode and a lower surface of the other electrode.
申请公布号 US2016358573(A1) 申请公布日期 2016.12.08
申请号 US201615012612 申请日期 2016.02.01
申请人 Samsung Display Co. Ltd. 发明人 TAKEUCHI Noboru;KANG Min Soo;KIM Beom Jun;KIM Yoon Ho;SYN Seong Yeol;LEE Hong Woo
分类号 G09G3/36;H03K17/687 主分类号 G09G3/36
代理机构 代理人
主权项 1. A gate driving circuit comprising: a pull-up control unit including a control transistor which applies a carry signal provided from a carry terminal of one of previous stages to a control node; a pull-up unit which outputs a clock signal into a kth gate output signal (wherein, k is a natural number equal to or larger than 1) according to a signal applied to the control node; a carry unit which outputs the clock signal into a kth carry signal according to the signal applied to the control node; and a pull-down unit which pulls down the control node to an off voltage in response to a carry signal of one of next stages, wherein the control transistor includes a gate electrode and one electrode connected to the carry terminal and the other electrode connected to the control node, the one electrode and the other electrode being disposed on the gate electrode such that the one electrode and the other electrode being insulated from the gate electrode, wherein the gate electrode and the other electrode are disposed not to be overlapped with each other, and a distance between an upper surface of the gate electrode and a lower surface of the one electrode is longer than that of the upper surface of the gate electrode and a lower surface of the other electrode.
地址 Yongin-City KR