发明名称 |
Implementing RC and coupling delay correction for SRAM |
摘要 |
A method and circuit for implementing delay correction in static random access memory (SRAM), and a design structure on which the subject circuit resides are provided. The SRAM circuit includes a precharge enable signal coupled between precharge near and precharge far signals and wordline near and wordline far signals of the SRAM. A precharge pull down device is coupled between the precharge far signal and ground and is controlled responsive to the precharge enable signal to decrease a time delay of the falling transition of the precharge far signal. A respective word line pull up device is coupled between a respective wordline far signal and a voltage supply rail and is controlled responsive to the precharge enable signal to increase wordline voltage level upon a rising transition of the wordline far signal. |
申请公布号 |
US8675427(B2) |
申请公布日期 |
2014.03.18 |
申请号 |
US201213414133 |
申请日期 |
2012.03.07 |
申请人 |
BEHRENDS DERICK G.;CHRISTENSEN TODD A.;HEBIG TRAVIS R.;LAUNSBACH MICHAEL;NELSON DANIEL M.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEHRENDS DERICK G.;CHRISTENSEN TODD A.;HEBIG TRAVIS R.;LAUNSBACH MICHAEL;NELSON DANIEL M. |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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