发明名称 METHOD OF MANUFACTURING SENSOR FOR SEMICONDUCTIVE GAS TRANSDUCER
摘要 FIELD: instrument industry. ^ SUBSTANCE: method comprises forming contact areas on one side of the dielectric substrate by spraying platinum and heater made of meander on the other side of substrate, spraying film of tin dioxide, depositing a catalyzer, annealing the substrate in air, and applying additional layer of catalyzer made of nano-grains. ^ EFFECT: enhanced sensitivity. ^ 5 dwg
申请公布号 RU2319953(C1) 申请公布日期 2008.03.20
申请号 RU20060129503 申请日期 2006.08.15
申请人 OBSHCHESTVO S OGRANICHENNOJ OTVETSTVENNOST'JU NAUCHNO-PROIZVODSTVENNOE PREDPRIJATIE "SENSERIJA" 发明人 ANISIMOV OLEG VIKTOROVICH;DAVYDOVA TAMARA ANATOL'EVNA;MAKSIMOVA NADEZHDA KUZ'MINICHNA;CHERNIKOV EVGENIJ VIKTOROVICH;SHCHEGOL' SERGEJ STEPANOVICH
分类号 G01N27/12 主分类号 G01N27/12
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