| 摘要 |
Provided are: a Cr-Ti alloy sputtering target material, which is capable of suppressing the generation of fine particles during sputtering; and a method for producing this Cr-Ti alloy sputtering target material. A Cr-Ti alloy sputtering target material which is represented by composition formula Cr100-X-TiX (40 ≤ X ≤ 60) in terms of the atomic ratio, with the balance made up of unavoidable impurities that include Mg, Al, Si, Mn, Ni, Cu and Sn in an amount of from 1 ppm by mass to 50 ppm by mass (inclusive) in total. A method for producing a Cr-Ti alloy sputtering target material, wherein a Ti powder that contains, as impurities, Mg, Al, Si, Mn, Ni, Cu and Sn in an amount of from 1 ppm by mass to 50 ppm by mass (inclusive) in total and a Cr powder that contains, as impurities, Mg, Al, Si, Mn, Ni, Cu and Sn in an amount of from 1 ppm by mass to 50 ppm by mass (inclusive) in total are mixed with each other and sintered under pressure. |
