发明名称 OFF-AXIS SPUTTERING DEPOSITION FOR GROWTH OF SINGLE CRYSTALLINE FILMS OF A BROAD RANGE OF COMPLEX MATERIALS
摘要 Systems and methods are disclosed for growing crystalline films of a broad range of complex materials with high crystalline quality by off-axis sputtering deposition. The synthesis of sputtering targets relating to the systems and methods is also described. Materials that can be grown include binary, ternary and quaternary oxides, metals and alloys, and intermetallics with simple or complex crystal structures. The disclosed systems and methods can be regarded as a broadly applicable for the growth of many other materials having magnetic, electronic, and optical applications.
申请公布号 US2016362812(A1) 申请公布日期 2016.12.15
申请号 US201615180467 申请日期 2016.06.13
申请人 Ohio State Innovation Foundation 发明人 Yang Fengyuan
分类号 C30B23/08;C30B29/22;H01J37/34;C30B29/02;C23C14/34;C30B23/06;C30B29/52 主分类号 C30B23/08
代理机构 代理人
主权项 1. A method for thin-film deposition of a material comprising: providing a sputtering target, wherein the sputtering target is comprised of at least one pressed powder of at least one constituent material; providing a substrate, wherein the substrate is located at an angle relative to the sputtering target; applying energy to the sputtering target to deposit, via sputtering deposition, at least one film of the material on the substrate, wherein the material can comprise at least one nonvolatile single crystalline film, and wherein growth parameters associated with the sputtering deposition are optimized for the sputtering deposition of the material.
地址 Columbus OH US