发明名称 ELECTROSTATIC DISCHARGE PROTECTION DEVICE FOR AN INTEGRATED CIRCUIT
摘要 An integrated circuit is made of a semiconductor material and comprises an input and/or output terminal connected to an output transistor forming a parasitic element capable of triggering itself under the effect of an electrostatic discharge applied to the terminal. The integrated circuit comprises a protection device formed so as to be biased at the same time as the parasitic element under the effect of an electrostatic discharge, and more than the parasitic element to evacuate a discharge current as a priority.
申请公布号 US2008048208(A1) 申请公布日期 2008.02.28
申请号 US20070828855 申请日期 2007.07.26
申请人 STMICROELECTRONICS SA 发明人 BRUNEL JOHN;FROIDEVAUX NICOLAS
分类号 H01L27/06;H01L21/8249 主分类号 H01L27/06
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