THIN FILM FORMATION APPARATUS, SPUTTERING CATHODE, AND METHOD OF FORMING THIN FILM

摘要

Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus 1 forms a thin film of a metal compound on a substrate 43 in a vacuum chamber 21 by sputtering. The vacuum chamber 21 is provided in its inside with targets 63a and b composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas, arranged to produce mutual electromagnetic and pressure interactions with the targets 63a and b. The active species source is provided with gas sources 76 and 77 for supplying the reactive gas, and an energy source 80 for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source 80 is provided between itself and the vacuum chamber 21 with a dielectric window for supplying the energy into the vacuum chamber 21. The dielectric window is arranged in parallel with the substrate 43, or in such a way as inclining towards the targets 63a and b side with an angle of less than 90° to the substrate 43.