| 摘要 |
The present invention relates to a contact structure of a semiconductor device. An exemplary structure about a contact structure of a semiconductor device includes a substrate which includes a peripheral surface and a trench under the peripheral surface, a deformation material which fills the trench, - the lattice constant of the deformation material is different from the lattice constant of the substrate-, an interlayer dielectric (ILD) which has an opening part on the deformation material, - the opening part includes a dielectric sidewall and a deformation material bottom -, a semiconductor layer on the sidewall and bottom of the opening part, a dielectric layer on the semiconductor layer and a metal layer which fills the opening part of the dielectric layer. |
