发明名称 STRUCTURE FOR REDUNDANCY PROGRAMMING OF A MEMORY DEVICE
摘要 A design structure for implementing redundancy programming in a memory macro of an integrated circuit chip. It is assumed that all fails are row fails until determined to be bitline fails, circuit means for implementing a method wherein it is assumed that all fails are row fails until determined to be bitline fails and test patterns are passed back to the failure detecting circuit when a wordline destination of the test patterns has previously been determined to be failing, and the test patterns and resultant patterns are passed between the memory macro and a test engine via logic paths connecting the memory macro to other circuits in said integrated circuit chip.
申请公布号 US2008170448(A1) 申请公布日期 2008.07.17
申请号 US20080046508 申请日期 2008.03.12
申请人 BARTH JOHN EDWARD;GORMAN KEVIN WILLIAM 发明人 BARTH JOHN EDWARD;GORMAN KEVIN WILLIAM
分类号 G11C29/00 主分类号 G11C29/00
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