| 摘要 |
PROBLEM TO BE SOLVED: To provide an FET of high breakdown strength, along with its manufacturing method, capable of sufficiently reducing on-resistance during operation. SOLUTION: A laminated structure in which a p-type GaN channel layer 16 is sandwiched between, from above and below, an n-type GaN source layer 18 and an n-type GaN drain layer 14, is processed in mesa shape. A slope is formed on its side surface, and gate electrodes 40Ga and 40Gb are provided on the inclined side surface of the p-type GaN channel layer 16 at the slope through an SiO<SB>2</SB>gate insulating film 24. In other words, the inclined side surface of the p-type GaN channel layer 16 is used as a channel region. So, its channel length can be controlled by thickness of the p-type GaN channel layer 16, for attaining a shorter channel length with ease and high precision. COPYRIGHT: (C)2009,JPO&INPIT
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