| 摘要 |
A method for producing etched holes and/or etched trenches of components based on silicon and/or a layered silicon/insulator structure. A germanium-containing layer and/or a germanium layer is provided at the point in the etching direction at which or in whose surroundings an etching procedure is to be completed. Germanium and/or germanium compounds are detected during the etching procedure and the etching procedure is controlled, in particular interrupted, as a function of the detection of germanium and/or germanium compounds. In addition, a diaphragm sensor unit is provided, in whose layered structure a germanium and/or germanium-containing layer is provided.
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