| 摘要 |
<p>A method for fabricating a flash memory device is provided to reduce an interference effect of cells by etching an isolation film to have an inclined portion and filling an etched portion of the isolation film with a control gate. A trench is formed on a semiconductor substrate(20) having a tunnel oxide layer(21) and a conductive layer for floating gates, and an isolation film(26) is formed in the trench. The isolation film is etched so that a center portion of the isolation film is lower than an edge of the isolation film adjacent to the conductive layer. Before the isolation film is etched, the isolation film is etched by a predetermined thickness.</p> |
