| 发明名称 |
Semiconductor Device and Method for Manufacturing the Same |
| 摘要 |
An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si. |
| 申请公布号 |
US2016172382(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201514944444 |
申请日期 |
2015.11.18 |
| 申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Hayakawa Masahiko;Sakama Mitsunori;Toriumi Satoshi |
| 分类号 |
H01L27/12;G02F1/1368;H01L27/32 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. (canceled) |
| 地址 |
Kanagawa-ken JP |
